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Sn-839 continuous bright tin plating process

Sn-839 continuous bright tin plating process

  • Jenis
    Pelapisan Timah Cerah
  • Menggunakan
    Pelapisan timah
  • barang
    bahan pembantu kimia
  • Fitur
    pelapisan kecepatan tinggi
  • Tempat asal
    Cina
  • Nama merek
    FENGFAN
  • Nomor model
    Sn-839
  • Kuantitas min Order
    Bisa dinegosiasikan
  • Harga
    dapat dinegosiasikan
  • Kemasan rincian
    Kemasan standar ekspor
  • Waktu pengiriman
    15-25 hari kerja
  • Syarat-syarat pembayaran
    L/C,D/A,D/P,T/T,Western Union,MoneyGram
  • Menyediakan kemampuan
    200000pcs/hari

Sn-839 continuous bright tin plating process

Sn-839 continuous bright tin plating process

The Sn-839 process is suitable for continuous bright tin plating processes at high speed. It is designed for strip, wire, connectors, lead frames, etc. The main features and advantages of the process are briefly described below.

 

1, The plating is not easy to produce pinholes and fogging, and can get uniform bright plating in a wide range of current.

2, Lead-free and cadmium-free, complying with ROHS and ELV regulations.

3, Very low organic content, minimal discolouration after steam and heat treatment, excellent solderability.

4, High current efficiency, stable plating solution, easy to control.

5, The plating retains its good ductility and weldability even after storage.

 

Solution composition

 

Optimal           Range

Sn2+                                               50.0 g/L                                    50-80 g/L

Methanesulfonic acid        200 g/L                                    150-220 g/L

Sn-839A carrier            20ml/l                                      15-25 ml/l

Sn-839B brightener       5ml/l                                        3- 10 ml/l

Temp.              18-25            18-25

Cathode current density    20A/dm2                                                        5-40A/dm2

Anode:Cathode area      2 :1                                          2 :1

Voltage                                         1-3V                                        1-3V

Deposition rate            Minimum 10 microns per minute at a current density of 20A/dm2